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| 100-GHz Transistors from Wafer-Scale Epitaxial Graphene | Publication: Science Magazine
Company: IBM Corp.
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February 5, 2010 -- The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.
By Y.-M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, Ph. Avouris, IBM T. J. Watson Research Center,
This brief introduction has been excerpted from the original article.
View the entire article on the Science Magazine website.
| Keywords: IBM, Science Magazine, transistors, graphene,
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