July 26, 2010 -- Vishay Intertechnology, Inc. today unveiled the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm sq. outline. The 20-V MICRO FOOT Si8800EDB combines an ultra-small 0.8-mm by 0.8-mm outline with a height of 0.357 mm to save space in portable electronics.

As portable devices become more compact, the size of components becomes critical, as PCB areas are extremely limited due to the space taken by keypads and batteries. With its ultra-small outline and height, the Si8800EDB is 36 % smaller and 11 % thinner than the next smallest n-channel device in a chipscale package, allowing for the creation of more compact end products with increased functionality.

The chipscale packaging of the Si8800EDB provides an extremely low on-resistance per area due to its packageless technology and increased die area. The MOSFET offers maximum on-resistance values of 80 milliohms at 4.5 V, 90 milliohms at 2.5 V, 105 milliohms at 1.8 V, and 150 milliohms at 1.5 V.

Typical applications for the new device will include load switches and small signal switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The Si8800EDB's low on-resistance prolongs battery life between charges in these products.

The Si8800EDB features typical ESD protection of 1500 V, is compliant to RoHS Directive 2002/95/EC, and is halogen-free according to the IEC 61249-2-21 Definition.

Samples and production quantities of the new power MOSFET are available now, with lead times of 16 weeks for larger orders.

Go to the Vishay Intertechnology, Inc. website for product details.